M. Peressi: search on Z-Library

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1

Electronic structure of GaAs with an InAs (001) monolayer

Tit, N., Peressi, M.

Journal:

Physical Review B

Year:

1995

Language:

english

File:

PDF, 227 KB

english, 1995

2

Electron localization in the insulating state: Application to crystalline semiconductors

Sgiarovello, Claudia, Peressi, Maria, Resta, Raffaele

Journal:

Physical Review B

Year:

2001

Language:

english

File:

PDF, 132 KB

english, 2001

3

On the concentration of large deviations for fat tailed distributions, with application to financial data

Filiasi, Mario, Livan, Giacomo, Marsili, Matteo, Peressi, Maria, Vesselli, Erik, Zarinelli, Elia

Journal:

Journal of Statistical Mechanics Theory and Experiment

Year:

2014

Language:

english

File:

PDF, 2.65 MB

english, 2014

4

Structural and electronic properties of strained Si/GaAs heterostructures

Peressi, M., Colombo, L., Resta, R., Baroni, S., Baldereschi, A.

Journal:

Physical Review B

Year:

1993

Language:

english

File:

PDF, 313 KB

english, 1993

5

Ab initio calculation of the band offset at strained GaAs/InAs (001) heterojunctions

Tit, Nacir, Peressi, Maria, Baroni, Stefano

Journal:

Physical Review B

Year:

1993

Language:

english

File:

PDF, 213 KB

english, 1993

6

Band engineering at interfaces: theory and numerical experiments

Peressi, M, Binggeli, N, Baldereschi, A

Journal:

Journal of Physics D Applied Physics

Year:

1998

Language:

english

File:

PDF, 1.08 MB

english, 1998

7

Bulk and interfacial strain in Si/Ge heterostructures

Peressi, Maria, Baroni, Stefano

Journal:

Physical Review B

Year:

1994

Language:

english

File:

PDF, 536 KB

english, 1994

8

Lack of band-offset transitivity for semiconductor heterojunctions with polar orientation: ZnSe-Ge(001), Ge-GaAs(001), and ZnSe-GaAs(001)

Bratina, G., Vanzetti, L., Sorba, L., Biasiol, G., Franciosi, A., Peressi, M., Baroni, S.

Journal:

Physical Review B

Year:

1994

Language:

english

File:

PDF, 468 KB

english, 1994

9

Characterization of Si-doped GaAs cross-sectional surfaces via ab initio simulations

Duan, Xiangmei, Peressi, Maria, Baroni, Stefano

Journal:

Physical Review B

Year:

2005

Language:

english

File:

PDF, 2.78 MB

english, 2005

10

Interface states at ZnSe/Ge heterojunctions: the role of atomic interdiffusion and disorder

M. Peressi, F. Favot, G. Cangiani, A. Baldereschi

Year:

2002

Language:

english

File:

PDF, 389 KB

english, 2002

11

Band offsets and stability of BeTe/ZnSe (100) heterojunctions

Bernardini, Fabio, Peressi, Maria, Fiorentini, Vincenzo

Journal:

Physical Review B

Year:

2000

Language:

english

File:

PDF, 91 KB

english, 2000

12

Retrospective Study of Metastatic Melanoma and Renal Cell Carcinoma to the Brain with Multivariate Analysis of Prognostic Pre-Treatment Clinical Factors

Ferrel, Ethan, Roehrig, Andrew, Kaya, Erin, Carlson, Jonathan, Ling, Benjamin, Wagner, Aaron, MacKay, Alexander, Call, Jason, Demakas, John, Lamoreaux, Wayne, Fairbanks, Robert, Cooke, Barton, Peressi

Journal:

International Journal of Molecular Sciences

Year:

2016

Language:

english

File:

PDF, 701 KB

english, 2016

13

SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications II - Trieste, France (Sunday 23 May 1993)] Physical Concepts and Materials for Novel Optoelectronic Device Applications II - Band offsets engineering at semiconductor heterojunctions

Peressi, M., Colombo, L., Baldereschi, Alfonso, Resta, R., Baroni, Stefano, Beltram, Fabio, Gornik, Erich

Year:

1993

Language:

english

File:

PDF, 974 KB

english, 1993

14

Spontaneous symmetry breaking on ordered, racemic monolayers of achiral theophylline: formation of unichiral stripes on Au(111)

Pividori, Marco, Dri, Carlo, Orselli, Maria Elena, Berti, Federico, Peressi, Maria, Comelli, Giovanni

Journal:

Year:

2016

Language:

english

File:

PDF, 3.17 MB

english, 2016

15

Tunability of the CO adsorption energy on a Ni/Cu surface: Site change and coverage effects

Vesselli, Erik, Rizzi, Michele, Furlan, Sara, Duan, Xiangmei, Monachino, Enrico, Dri, Carlo, Peronio, Angelo, Africh, Cristina, Lacovig, Paolo, Baldereschi, Alfonso, Comelli, Giovanni, Peressi, Maria

Journal:

The Journal of Chemical Physics

Year:

2017

Language:

english

File:

PDF, 17.47 MB

english, 2017

16

Graphene on nickel (100) micrograins: Modulating the interface interaction by extended moiré superstructures

Zou, Zhiyu, Carnevali, Virginia, Jugovac, Matteo, Patera, Laerte L., Sala, Alessandro, Panighel, Mirco, Cepek, Cinzia, Soldano, German, Mariscal, Marcelo M., Peressi, Maria, Comelli, Giovanni, Africh,

Journal:

Year:

2018

Language:

english

File:

PDF, 2.42 MB

english, 2018

17

Local interface composition and band discontinuities in heterovalent heterostructures

Nicolini, R., Vanzetti, L., Mula, Guido, Bratina, G., Sorba, L., Franciosi, A., Peressi, M., Baroni, S., Resta, R., Baldereschi, A., Angelo, J. E., Gerberich, W. W.

Journal:

Physical Review Letters

Year:

1994

Language:

english

File:

PDF, 494 KB

english, 1994

18

species on Ni(110)

Dri, Carlo, Peronio, Angelo, Vesselli, Erik, Africh, Cristina, Rizzi, Michele, Baldereschi, Alfonso, Peressi, Maria, Comelli, Giovanni

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 321 KB

english, 2010

19

Learning from Nature: Charge Transfer and Carbon Dioxide Activation at Single, Biomimetic Fe Sites in Tetrapyrroles on Graphene

Corva, Manuel, Mohamed, Fatema, Tomsic, Erika, Rinaldi, Matteo, Cepek, Cinzia, Seriani, Nicola, Peressi, Maria, Vesselli, Erik

Journal:

The Journal of Physical Chemistry C

Year:

2019

File:

PDF, 1.72 MB

2019

20

Role of defects in the electronic properties of amorphous/crystalline Si interface

Peressi, Maria, Colombo, Luciano, Gironcoli, Stefano de

Journal:

Physical Review B

Year:

2001

Language:

english

File:

PDF, 68 KB

english, 2001

21

Stabilization of half metallicity in Mn-doped silicon upon Ge alloying

Picozzi, S., Antoniella, F., Continenza, A., MoscaConte, A., Debernardi, A., Peressi, M.

Journal:

Physical Review B

Year:

2004

Language:

english

File:

PDF, 95 KB

english, 2004

22

Chemical and structural contributions to the valence-band offset at GaP/GaAs heterojunctions

Di Ventra, M., Peressi, M., Baldereschi, A.

Journal:

Physical Review B

Year:

1996

Language:

english

File:

PDF, 110 KB

english, 1996

23

Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures

Biasiol, G., Sorba, L., Bratina, G., Nicolini, R., Franciosi, A., Peressi, M., Baroni, S., Resta, R., Baldereschi, A.

Journal:

Physical Review Letters

Year:

1992

Language:

english

File:

PDF, 744 KB

english, 1992

24

Random pseudobinary ionic alloys: lattice energy and structural properties

U. Tinivella, M. Peressi, A. Baldereschi

Year:

1997

Language:

english

File:

PDF, 140 KB

english, 1997

25

Spin polarization and band alignments at NiMnSb/GaAs interface

A. Debernardi, M. Peressi, A. Baldereschi

Journal:

Computational Materials Science

Year:

2005

Language:

english

File:

PDF, 220 KB

english, 2005

26

Structural properties and energetics of intrinsic and Si-doped GaAs nanowires: First-principles pseudopotential calculations

Ghaderi, Nahid, Peressi, Maria, Binggeli, Nadia, Akbarzadeh, Hadi

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 590 KB

english, 2010

27

As interfaces

Peressi, Maria, Baroni, Stefano, Baldereschi, Alfonso, Resta, Raffaele

Journal:

Physical Review B

Year:

1990

Language:

english

File:

PDF, 274 KB

english, 1990

28

Atomic-scale structure of alkali halide solid solutions

M. Peressi, A. Baldereschi

Journal:

Solid State Communications

Year:

1987

Language:

english

File:

PDF, 443 KB

english, 1987

29

Structural properties and stability of defected ZnSe/GaAs(0 0 1) interfaces

A. Stroppa, M. Peressi

Journal:

Computational Materials Science

Year:

2005

Language:

english

File:

PDF, 166 KB

english, 2005

30

heterostructures with defected interfaces: Structural, thermodynamic, and electronic properties

Stroppa, A., Peressi, M.

Journal:

Physical Review B

Year:

2005

Language:

english

File:

PDF, 176 KB

english, 2005

31

Trapping of Charged Gold Adatoms by Dimethyl Sulfoxide on a Gold Surface

Feng, Zhijing, Velari, Simone, Cossaro, Albano, Castellarin-Cudia, Carla, Verdini, Alberto, Vesselli, Erik, Dri, Carlo, Peressi, Maria, De Vita, Alessandro, Comelli, Giovanni

Journal:

Year:

2015

Language:

english

File:

PDF, 1.88 MB

english, 2015

32

Cross-sectional imaging of sharp Si interlayers embedded in gallium arsenide

X. Duan, S. Baroni, S. Modesti, M. Peressi

Year:

2006

Language:

english

File:

PDF, 501 KB

english, 2006

33

Coordination defects in amorphous silicon and hydrogenated amorphous silicon: A characterization from first-principles calculations

Peressi, M., Fornari, M., Degironcoli, S., Desantis, L., Baldereschi, A.

Journal:

Philosophical Magazine B

Year:

2000

Language:

english

File:

PDF, 843 KB

english, 2000

34

[AIP FRONTIERS OF FUNDAMENTAL AND COMPUTATIONAL PHYSICS: 9th International Symposium - Udine and Trieste (Italy) (7–9 January 2008)] AIP Conference Proceedings - First-Principles Investigations of Intrinsic and Si-doped GaAs Nanowires: Structural Stability and Electronic Properties

Ghaderi, Nahid, Peressi, Maria, Binggeli, Nadia, Sidharth, B. G., Honsell, F., Mansutti, O., Sreenivasan, K., De Angelis, A.

Year:

2008

Language:

english

File:

PDF, 692 KB

english, 2008

35

Mechanism of CO Intercalation through the Graphene/Ni(111) Interface and Effect of Doping

Perilli, Daniele, Fiori, Sara, Panighel, Mirco, Liu, Hongsheng, Cepek, Cinzia, Peressi, Maria, Comelli, Giovanni, Africh, Cristina, Di Valentin, Cristiana

Journal:

The Journal of Physical Chemistry Letters

Year:

2020

File:

PDF, 3.81 MB

2020

36

Ab-initio electronic structure calculation of the InAs multiple quantum wells in bulk GaAs

Nacir Tit, Maria Peressi

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 396 KB

english, 1996

37

Coordination defects in amorphous silicon and hydrogenated amorphous silicon: a characterization from first-principles calculations

Peressi, M. Fornari, S. De Gironcol, M.

Journal:

Philosophical Magazine B

Year:

2000

Language:

english

File:

PDF, 306 KB

english, 2000

38

Structural and electronic properties of NiMnSb Heusler compound and its interface with GaAs

A Debernardi, M Peressi, A Baldereschi

Journal:

Materials Science and Engineering: C

Year:

2003

Language:

english

File:

PDF, 289 KB

english, 2003

39

Magnetic phase transition in strained MnAs compound

A. Debernardi, M. Peressi, A. Baldereschi

Journal:

Materials Science and Engineering: C

Year:

2003

Language:

english

File:

PDF, 308 KB

english, 2003

40

Tailoring Bimetallic Alloy Surface Properties by Kinetic Control of Self-Diffusion Processes at the Nanoscale

Rizzi, Michele, Furlan, Sara, Peressi, Maria, Baldereschi, Alfonso, Dri, Carlo, Peronio, Angelo, Africh, Cristina, Lacovig, Paolo, Vesselli, Erik, Comelli, Giovanni

Journal:

Journal of the American Chemical Society

Year:

2012

Language:

english

File:

PDF, 2.53 MB

english, 2012

41

Characterizing In and N impurities in GaAs from ab initio computer simulation of (110) cross-sectional STM images

Duan, Xiangmei, Peressi, Maria, Baroni, Stefano

Journal:

Physical Review B

Year:

2007

Language:

english

File:

PDF, 476 KB

english, 2007

42

Half-metallic Mn-doped Si(x)Ge(1 − x) alloys: a first principles study

M. Peressi, A. Debernardi, S. Picozzi, F. Antoniella, A. Continenza

Journal:

Computational Materials Science

Year:

2005

Language:

english

File:

PDF, 156 KB

english, 2005

43

Electronic properties of Mn compounds under strain

A. Debernardi, M. Peressi, A. Baldereschi

Journal:

Computational Materials Science

Year:

2003

Language:

english

File:

PDF, 250 KB

english, 2003

44

by high-resolution core-level spectroscopy

Vesselli, E., Baraldi, A., Bondino, F., Comelli, G., Peressi, M., Rosei, R.

Journal:

Physical Review B

Year:

2004

Language:

english

File:

PDF, 458 KB

english, 2004

45

Carbon Dioxide Hydrogenation on Ni(110)

Vesselli, Erik, Rogatis, Loredana De, Ding, Xunlei, Baraldi, Alessandro, Savio, Letizia, Vattuone, Luca, Rocca, Mario, Fornasiero, Paolo, Peressi, Maria, Baldereschi, Alfonso, Rosei, Renzo, Comelli, G

Journal:

Journal of the American Chemical Society

Year:

2008

Language:

english

File:

PDF, 1.48 MB

english, 2008

46

Interaction of carbon dioxide with Ni(110): A combined experimental and theoretical study

Ding, X., De Rogatis, L., Vesselli, E., Baraldi, A., Comelli, G., Rosei, R., Savio, L., Vattuone, L., Rocca, M., Fornasiero, P., Ancilotto, F., Baldereschi, A., Peressi, M.

Journal:

Physical Review B

Year:

2007

Language:

english

File:

PDF, 811 KB

english, 2007

47

Correction: Study of structures and thermodynamics of CuNi nanoalloys using a new DFT-fitted atomistic potential

Panizon, Emanuele, Olmos-Asar, Jimena A., Peressi, Maria, Ferrando, Riccardo

Journal:

Physical Chemistry Chemical Physics

Year:

2015

Language:

english

File:

PDF, 1.27 MB

english, 2015

48

Real-time imaging of adatom-promoted graphene growth on nickel

Patera, Laerte L., Bianchini, Federico, Africh, Cristina, Dri, Carlo, Soldano, German, Mariscal, Marcelo M., Peressi, Maria, Comelli, Giovanni

Journal:

Year:

2018

Language:

english

File:

PDF, 1.06 MB

english, 2018

49

Structural and magnetic properties of Mn-doped GaAs(1 1 0) surface

A. Stroppa, X. Duan, M. Peressi

Journal:

Materials Science and Engineering: B

Year:

2006

Language:

english

File:

PDF, 2.99 MB

english, 2006

50

Steering the Chemistry of Carbon Oxides on a NiCu Catalyst

Vesselli, Erik, Monachino, Enrico, Rizzi, Michele, Furlan, Sara, Duan, Xiangmei, Dri, Carlo, Peronio, Angelo, Africh, Cristina, Lacovig, Paolo, Baldereschi, Alfonso, Comelli, Giovanni, Peressi, Maria

Journal:

Year:

2013

Language:

english

File:

PDF, 1.79 MB

english, 2013

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